IRF511 TMOS Power FET
Data sheet
Direct substitute for NTE66, ECG66
by Tony van Roon
The IRF511 is a N-Channel enhancement-mode Silicon Gate TMOS Power Field Effect Transistor in a TO-220 package.
This TMOS Power Fet is designed for low voltage, high speed power switching applications such as switching
regulators, converters, solenoid and relay drivers.
Notes:
Silicon gate for Fast Switching speeds
Rugged -- SOA is Power Dissipation Limited
Source-to-Drain Diode characterized for use with inductive loads
| Device # |
Vds |
rDS(on) |
Id |
| IRF510 |
100V |
0.6 Ohm |
4.0 A |
| IRF511 |
60V |
0.6 Ohm |
4.0 A |
| IRF512 |
100V |
0.8 Ohm |
3.5 A |
| IRF513 |
60V |
0.8 Ohm |
3.5 A |
Back to Gadgets Menu page
Copyright © Tony van Roon